| PART |
Description |
Maker |
| DS1870E-010 |
LDMOS RF Power-Amplifier Bias Controller
|
Maxim Integrated Products, Inc.
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MAX1386 |
(MAX1385 / MAX1386) Dual RF LDMOS Bias Controllers
|
Maxim Integrated Products
|
| MW6IC1940NBR1 |
RF LDMOS Wideband Integrated Power Amplifier
|
http://
|
| MW7IC008NT1 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MD8IC970NR1 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MHVIC2115R2 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MW7IC915NT1 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MAX1386AETM MAX1385AETM MAX1385BETM MAX1386BETM |
SPECIALTY TELECOM CIRCUIT, QCC48
Dual RF LDMOS Bias Controllers with I2C/SPI Interface
|
MAXIM INTEGRATED PRODUCTS INC
|
| MHW1910D |
MHW1910-1 1930-1990 MHz, 10 W RF Power LDMOS Amplifier - Archived
|
Motorola
|
